4.5 Article

Hybrid Nanocomposites of All-Inorganic Halide Perovskites with Polymers for High-Performance Field-Effect-Transistor-Based Photodetectors: An Experimental and Simulation Study

期刊

ADVANCED MATERIALS INTERFACES
卷 9, 期 18, 页码 -

出版社

WILEY
DOI: 10.1002/admi.202200017

关键词

all-inorganic halide perovskite; CsPbBr; (3); P3HT nanocomposites; field-effect transistor-based photodetectors; solution-processed photodetectors; surface passivation

资金

  1. projects of the Key R & D projects of the Ministry of Science and Technology of China [SQ2019YFB220038]
  2. National Natural Science Foundation of China (NSFC) [81671787]
  3. Defense Industrial Technology Development Program [JCKY2016208B001]
  4. Fundamental Research Funds for the Central Universities [2020CX02002, BITBLR2020013]
  5. open foundation of Guangxi Key Laboratory of Processing for Non-Ferrous Metals and Featured Materials, Guangxi University [2021GXYSOF18]
  6. Lab of Space Optoelectronic Measurement Perception [LabSOMP-2018-03]

向作者/读者索取更多资源

In this paper, a feasible method for surface-passivating all-inorganic halide perovskites with poly(3-hexylthiophene) (P3HT) for field-effect transistor (FET)-based photodetectors is presented. The enhanced performance is attributed to the improvement of photogenerated charge carrier transportation and suppression of dark current through the photodetectors, as investigated by experimental and simulating study.
All-inorganic halide perovskites have recently emerged as a promising candidate for new-generation optoelectronics. The device performance of solution-processed photodetectors critically depends on the surface morphology and film features, however, the behind mechanism is not clear till now. In this paper, a feasible method for surface-passivating all-inorganic halide perovskites with poly(3-hexylthiophene) (P3HT) as the photoactive layer for field-effect transistor (FET)-based photodetectors is presented, and the underlying mechanisms to enhance device performance are investigated by experimental and simulating study. As the result, a high photoresponsivity of 469 A W-1 with a specific detectivity of 1.34 x 10(14) Jones is obtained under 0.4 mW cm(-2) 405 nm illumination for FET-based photodetector Au(S&D)/CsPbBr3:P3HT/PMMA/Al(G). This experimental and simulating study shows that the enhanced-performance origins from improving the photogenerated charge carriers transportation and suppressing the dark current through the photodetectors.

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