Quasi-CW Lasing from Directly Patterned and Encapsulated Perovskite Cavity at 260 K

Metal halide perovskites have emerged as promising gain materials for on-chip lasers in photonic integrated circuits. For these to become commercially relevant as economical on-chip light sources, a clear onset of quasi-continuous wave (quasi-CW) and, eventually, continuous wave (CW) lasing at room temperature or Peltier-cooling accessible temperatures from directly patterned perovskite cavities is a critical milestone that must be achieved. Herein, through directly patterning with nanoimprint lithography and encapsulation of the cavity with a thin layer of polycarbonate (PC), quasi-CW lasing from CH3NH3PbBr3 (MAPbBr(3)) is demonstrated up to 260 K. The PC layer is also shown to effectively encapsulate the surface defects of MAPbBr(3) and protect devices from environmental hazards. Through the combined analysis of the crystal quality, degradation process during optical pumping, defect encapsulation, and laser performance, room temperature CW lasing from directly patterned perovskite cavities should be within reach.

Automated summary

This study demonstrates the generation of quasi-continuous wave (quasi-CW) lasing from directly patterned perovskite cavities up to high temperatures using nanoimprint lithography and a thin layer of polycarbonate for encapsulation. The polycarbonate layer effectively protects the devices from surface defects and environmental hazards. The results suggest that achieving continuous wave (CW) lasing at room temperature from directly patterned perovskite cavities is within reach.