期刊
ACS PHOTONICS
卷 9, 期 3, 页码 914-921出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsphotonics.1c01728
关键词
nanowires; germanium tin semiconductors; photodetectors; extended short-wave infrared; field-effect transistor; silicon photonics
类别
资金
- NSERC Canada
- Canada Research Chairs
- Canada Foundation for Innovation
- Mitacs
- PRIMA Quebec
- Defence Canada (Innovation for Defence Excellence and Security, IDEaS)
- China Scholarship Council (CSC)
- Fonds de recherche du Quebec-Nature et technologies (FRQNT, PBEEE scholarship)
- Generalitat de Catalunya [2017 SGR 327]
- Severo Ochoa program from Spanish MINECO [SEV-2017-0706]
- CERCA Programme/Generalitat de Catalunya
- CSIC Research Platform on Quantum Technologies [PTI-001]
Group IV Ge1-xSnx semiconductors have tunable band gap energy and directness, and their attributes are exploited to implement highly responsive room-temperature short-wave infrared nanoscale photodetectors in Ge/Ge0.92Sn0.08 core/shell nanowire hetero-structures. The demonstrated Ge/Ge(0.92)Sn(0.08)p-type field-effect nanowire transistors exhibit superior optoelectronic properties and achieve broadband absorption in the short-wave infrared range.
Group IV Ge1-xSnx semiconductors hold the premise of enabling broadband silicon-integrated infrared optoelectronics due to their tunable band gap energy and directness. Herein, we exploit these attributes along with the enhanced lattice strain relaxation in Ge/Ge0.92Sn0.08 core/shell nanowire hetero-structures to implement highly responsive room-temperature short-wave infrared nanoscale photodetectors. Atomic-level studies confirm the uniform shell composition and its higher crystallinity with respect to thin films counterparts. The demonstrated Ge/Ge(0.92)Sn(0.08 )p-type field-effect nanowire transistors exhibit superior optoelectronic properties achieving simultaneously relatively high mobility, high ON/OFF ratio, and high responsivity, in addition to a broadband absorption in the short-wave infrared range. Indeed, the reduced band gap of the Ge0.92Sn0.08 shell yields an extended cutoff wavelength of 2.1 mu m, with a room-temperature responsivity reaching 2.7 A/W at 1550 nm. These results highlight the potential of Ge/Ge1-xSnx core/shell nanowires as silicon-compatible building blocks for nanoscale-integrated infrared photonics.
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