4.6 Article

Extended-SWIR Photodetection in All-Group IV Core/Shell Nanowires

期刊

ACS PHOTONICS
卷 9, 期 3, 页码 914-921

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsphotonics.1c01728

关键词

nanowires; germanium tin semiconductors; photodetectors; extended short-wave infrared; field-effect transistor; silicon photonics

资金

  1. NSERC Canada
  2. Canada Research Chairs
  3. Canada Foundation for Innovation
  4. Mitacs
  5. PRIMA Quebec
  6. Defence Canada (Innovation for Defence Excellence and Security, IDEaS)
  7. China Scholarship Council (CSC)
  8. Fonds de recherche du Quebec-Nature et technologies (FRQNT, PBEEE scholarship)
  9. Generalitat de Catalunya [2017 SGR 327]
  10. Severo Ochoa program from Spanish MINECO [SEV-2017-0706]
  11. CERCA Programme/Generalitat de Catalunya
  12. CSIC Research Platform on Quantum Technologies [PTI-001]

向作者/读者索取更多资源

Group IV Ge1-xSnx semiconductors have tunable band gap energy and directness, and their attributes are exploited to implement highly responsive room-temperature short-wave infrared nanoscale photodetectors in Ge/Ge0.92Sn0.08 core/shell nanowire hetero-structures. The demonstrated Ge/Ge(0.92)Sn(0.08)p-type field-effect nanowire transistors exhibit superior optoelectronic properties and achieve broadband absorption in the short-wave infrared range.
Group IV Ge1-xSnx semiconductors hold the premise of enabling broadband silicon-integrated infrared optoelectronics due to their tunable band gap energy and directness. Herein, we exploit these attributes along with the enhanced lattice strain relaxation in Ge/Ge0.92Sn0.08 core/shell nanowire hetero-structures to implement highly responsive room-temperature short-wave infrared nanoscale photodetectors. Atomic-level studies confirm the uniform shell composition and its higher crystallinity with respect to thin films counterparts. The demonstrated Ge/Ge(0.92)Sn(0.08 )p-type field-effect nanowire transistors exhibit superior optoelectronic properties achieving simultaneously relatively high mobility, high ON/OFF ratio, and high responsivity, in addition to a broadband absorption in the short-wave infrared range. Indeed, the reduced band gap of the Ge0.92Sn0.08 shell yields an extended cutoff wavelength of 2.1 mu m, with a room-temperature responsivity reaching 2.7 A/W at 1550 nm. These results highlight the potential of Ge/Ge1-xSnx core/shell nanowires as silicon-compatible building blocks for nanoscale-integrated infrared photonics.

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