期刊
SUSTAINABILITY
卷 14, 期 8, 页码 -出版社
MDPI
DOI: 10.3390/su14084603
关键词
chemical bath deposition; optoelectronic properties; photovoltaic behaviour; semiconductors
资金
- Deanship of Scientific Research at King Khalid University [R.G.P.2/107/42, TUMA-2021-4]
This study demonstrates that chemically deposited Ni2+ doped Bi2S3 thin films exhibit a homogeneous and crack-free morphology. The incorporation of Ni2+ improves the optoelectronic properties and enhances both the bandgap value and electrical conductivity, thereby optimizing the photovoltaic response of Bi2S3 for solar cell applications.
For photovoltaic applications, undoped and Ni2+ doped Bi2S3 thin films were chemically deposited onto glass substrates at room temperature. Elemental diffraction analysis confirmed the successful Ni2+ incorporation in the range of 1.0 to 2.0 at. %, while X-ray Diffraction analysis revealed that orthorhombic crystal lattice of Bi2S3 was conserved while transferring from binary to ternary phase. Scanning electron microscopy images reported homogeneous and crack-free morphology of the obtained films. Optoelectronic analysis revealed that the bandgap value was shifted from 1.7 to 1.1 eV. Ni2+ incorporation also improved the carrier concentration, leading to higher electrical conductivity. Resultant optoelectronic behavior of ternary Bi2-x NixS3 thin films suggests that doping is proved to be an effectual tool to optimize the photovoltaic response of Bi2S3 for solar cell applications.
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