4.8 Article

Sliding silicon-based Schottky diodes: Maximizing triboelectricity with surface chemistry

期刊

NANO ENERGY
卷 93, 期 -, 页码 -

出版社

ELSEVIER
DOI: 10.1016/j.nanoen.2021.106861

关键词

Triboelectric nanogenerator; Silicon; Schottky diode; Friction; Surface chemistry

资金

  1. Australian ResearchCouncil [DP190100735, FT190100148]
  2. Microscopy Australia
  3. Australian National Fabrication Facility (ANFF)
  4. Australian Research Council [FT190100148] Funding Source: Australian Research Council

向作者/读者索取更多资源

Triboelectric nanogenerators are a promising energy technology that can harvest electricity from mechanical energy. By engineering the surface chemistry of silicon with covalent Si-C-bound organic monolayers, friction, wettability, and surface work function can be systematically tuned to maximize output. The study demonstrates a link between surface chemistry modifications and improved current outputs, suggesting novel opportunities for silicon-based triboelectric nanogenerators.
Triboelectric nanogenerators are an emerging energy technology which harvests electricity from mechanical energy. Within this technology there are sliding metal-semiconductor contacts, which can be miniaturized, and having a direct current (DC) output are suitable as autonomous power sources for electronic devices. Herein we explore the scope of engineering the surface chemistry of silicon towards maximizing the output of a Pt-Si Schottky diode-based triboelectric nanogenerator. Through the attachment of covalent Si-C-bound organic monolayers we have engineered silicon surface chemistry to systematically tune friction, wettability and surface work function, with the overall aim of clarifying the interplay between mechanical and electronic properties defining the DC output of a zero-bias sliding Schottky diode. Current outputs increase two-fold in amine- and alcohol-terminated monolayers compared to shorter and carbon-terminated films. This trend parallels the change in friction measured in response to surface functionalization. A pronounced effect of silicon doping on friction and current was revealed by atomic force microscopy, indicating a link between doping and friction, even at zero applied bias. This work reveals an electrical component of friction by demonstrating a friction excess in response to the flow of current, and it opens up novel avenues into the use of silicon, and its surface chemistry, as platform for triboelectric nanogenerators.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.8
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据