4.8 Article

Surface reconstruction strategy improves the all-inorganic CsPbIBr2 based perovskite solar cells and photodetectors performance

期刊

NANO ENERGY
卷 94, 期 -, 页码 -

出版社

ELSEVIER
DOI: 10.1016/j.nanoen.2022.106960

关键词

CsPbIBr2; Surface reconstruction; High efficiency; Stability; Solar cells; Photodetectors

资金

  1. National Key Research and Development Program of China [2021YFA0715600, 2018YFB2202900]
  2. National Natural Science Foundation of China [52192610, 61704131]
  3. Key Research and Development Program of Shaanxi Province [2020GY-310]
  4. Joint Research Funds of Department of Science & Technology of Shaanxi Province [2020GXLH-Z-018]
  5. Fundamental Research Funds for the Central Universities
  6. Innovation Fund of Xidian University

向作者/读者索取更多资源

Researchers have successfully improved the efficiency and stability of inorganic cesium lead halide optoelectronic devices and reduced energy loss through surface reconstruction.
Inorganic cesium lead halides have triggered the widespread interest of scientist researchers because of their distinct advantages. CsPbIBr2 is an excellent optoelectronic material which can well balance the stability and the photoelectric conversion efficiency of the device. However, the large energy loss (E-loss) is the most urgent challenge which needs to be solved. Here, a simple method is presented to reduce E-loss and improve the open-circuit voltage (V-oc) of the CsPbIBr2 PSCs through effective surface reconstruction with formamidinium iodide (FAI). The treatment not only induces a halide exchange at the interface, but also changes the surface termination of CsPbIBr2. As a result, the disorder of the lattice structure has been suppressed and the lattice constant has been enlarged, leading to better stability and reduced bandgap. Moreover, the treatment optimizes the film morphology, adjusts the energy level, accelerates the carrier transport and further suppresses nonradiative recombination. Finally, the energy loss is restrained and the device realizes a record high efficiency of 11.31% with a high V-oc of 1.34 V. Besides, the treated devices also present high sensitivity, responsivity and detectivity in the photodetector applications. Furthermore, the devices exhibit excellent stability under continuous heating, continuous illumination and long-term ambient stored conditions.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.8
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据