期刊
NANO ENERGY
卷 93, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.nanoen.2021.106845
关键词
piezo-phototronic effect; hot-electron; transfer dynamic; GaN; ultraviolet photodetector
类别
资金
- Science and Technology Program of Guangzhou [2019050001]
- Key-Area Research and Development Project of Guangdong Province [2020B010172001, 2019B010132004]
- Guangdong Basic and Applied Basic Research Foundation [2021A1515012188]
- National Natural Science Foundation of China [11804103]
- Guangdong Basic and Applied Basic Research Foundation for Distinguished Young Scholars [2018B030306048]
The efficiency of plasmon-induced hot-electron transfer in Au NPs/GaN film can be enhanced by nearly 120% under 3.57% compressive straining using the piezo-phototronic effect. This enhancement surpasses previous achievements through methods such as morphology control or optimizing charge-transfer pathways. The piezo-phototronic effect modulates the barrier height between Au NPs/GaN heterojunction, leading to increased/decreased photoresponsivity under compressive/tensile strain in the plasmonic heterojunction.
Performances of plasmon-mediated optoelectronic devices are mainly limited by the transfer efficiency of the energetic hot electrons (QEHET) from metallic nanostructures into the semiconductor active region. Here, we report a novel strategy to enhance the efficiency of plasmon-induced hot-electron transfer (PHET) across Au nanoparticles (NPs)/GaN film via the external-strain-induced piezo-phototronic effect. By performing transient absorption (TA) spectrum measurement of the Au NPs/GaN freestanding membrane under different strain conditions, the enhancement of effective QEHET is estimated to be nearly 120% under 3.57% compressive straining. This enhancement is comparable or better than previously reported achievement using other methods such as controlling the material's morphology or optimizing charge-transfer transition pathway. The mechanisms of the piezo-phototronic enhanced PHET rely on the modulated barrier height between Au NPs/GaN heterojunction. This was further confirmed by performing the photoresponse ability measurements in Au NPs/GaN film under external straining. Photoresponsivity of the plasmonic heterojunction is obviously increased/decreased when the hybrid membrane undergoes compressive/tensile strain. These results advance our understanding of the piezo-phototronic effect on QEHET in plasmonic heterostructures, and offer effective strategies to manipulate hot carrier dynamics for high-performance plasmonic devices and photoelectrochemical systems.
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