期刊
MICROMACHINES
卷 13, 期 4, 页码 -出版社
MDPI
DOI: 10.3390/mi13040524
关键词
atomic force microscopy; atomic and close-to-atomic scale manufacturing; silicon; manufacturing III; semiconductors
类别
资金
- Science Foundation Ireland [15/RP/B3208]
- '111' Project by the Ministry of Education of China [B07014]
This paper investigates the fabrication of atomic-scale structures on Si (100) substrates using atomic force microscopy (AFM) in a humid environment and under ambient conditions. The results show that patterns can be formed through local oxidation with the help of platinum-coated tips and bias applied to the tip-substrate junction. Additionally, direct removal of material has been achieved using single crystal diamond tips. The study demonstrates the potential of fabricating atomic-scale electrodes and provides insights into material removal at the atomic scale.
In this paper, the atomic-scale structure fabrication on Si (100) substrate using atomic force microscopy (AFM) with the aid of electrochemical and mechanical processes in a humid environment and under ambient conditions is studied. The local oxidation patterns are formed using platinum-coated tips with the aid of bias applied to the tip-substrate junction, and direct removal has been achieved using single crystal diamond tips, enabling the structure fabrication at the atomic and close-to-atomic scale. The depth and height of the etched trenches reached about 1 nm, which provides an approach for the fabrication of atomic-scale electrodes for molecular device development. Furthermore, material removal close to about three silicon atoms (similar to 3.2 angstrom) has been achieved. This is important in molecular device fabrication. A detailed comparison among the nanopatterns and the material removal over bare and hydrofluoric acid (HF) treated silicon substrates is provided. This comparison is useful for the application of fabricating atomic-scale electrodes needed for the molecular electronic components. A deep understanding of atomic-scale material removal can be pushed to fabricate a single atomic protrusion by removing the neighbouring atoms so that the molecule can be attached to a single atom, thereby the AFM tip and Si substrate could act as the electrodes and the molecule between them as the channel, providing basic transistor actions in a molecular transistor design. In this paper, platinum-coated and single-crystal diamond tips are used to explain the oxide formations and direct material removal, respectively.
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