Process Control Monitor (PCM) for Simultaneous Determination of the Piezoelectric Coefficients d31 and d33 of AlN and AlScN Thin Films

Accurate and efficient measurements of the piezoelectric properties of AlN and AlScN films are very important for the design and simulation of micro-electro-mechanical system (MEMS) sensors and actuator devices. In this study, a process control monitor (PCM) structure compatible with the device manufacturing process is designed to achieve accurate determination of the piezoelectric coefficients of MEMS devices. Double-beam laser interferometry (DBLI) and laser Doppler vibrometry (LDV) measurements are applied and combined with finite element method (FEM) simulations, and values of the piezoelectric parameters d(33) and d(31) are simultaneously extracted. The accuracy of d(31) is verified directly by using a cantilever structure, and the accuracy of d(33) is verified by in situ synchrotron radiation X-ray diffraction; the comparisons confirm the viability of the results obtained by the novel combination of LDV, DBLI and FEM techniques in this study.

Automated summary

By combining double-beam laser interferometry and laser Doppler vibrometry, the study successfully extracted piezoelectric parameters of MEMS devices, with the accuracy of the results verified through validation methods.