期刊
LIGHT-SCIENCE & APPLICATIONS
卷 11, 期 1, 页码 -出版社
SPRINGERNATURE
DOI: 10.1038/s41377-022-00753-4
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资金
- National Key Research and Development Program of China [2016YFB0400101, 2018YFE0125700]
- National Natural Science Foundation of China [61974002, 62075081, 61927806]
- Key-Area Research and Development Program of Guangdong Province [2020B010172001]
- Major Scientific and Technological Innovation Project (MSTIP) of Shandong Province [2019JZZY010209]
This study proposes a desorption-tailoring strategy to solve the doping asymmetry issue in wide-gap semiconductors. By self-assembling p-AlGaN superlattices in AlGaN, high hole concentration and vertical miniband hole transport are achieved. Deep-ultraviolet light-emitting diodes fabricated using this method exhibit improved carrier injection efficiency and light extraction efficiency.
Solving the doping asymmetry issue in wide-gap semiconductors is a key difficulty and long-standing challenge for device applications. Here, a desorption-tailoring strategy is proposed to juggle the carrier concentration and transport. Specific to the p-doping issue in Al-rich AlGaN, self-assembled p-AlGaN superlattices with an average Al composition of over 50% are prepared by adopting this approach. The hole concentration as high as 8.1 x 10(18) cm(-3) is thus realized at room temperature, which is attributed to the significant reduction of effective Mg activation energy to 17.5 meV through modulating the activating path, as well as the highlighted Mg surface-incorporation by an intentional interruption for desorption. More importantly, benefiting from the constant ultrathin barrier thickness of only three monolayers via this approach, vertical miniband transport of holes is verified in the p-AlGaN superlattices, greatly satisfying the demand of hole injection in device application. 280 nm deep-ultraviolet light-emitting diodes are then fabricated as a demo with the desorption-tailored Al-rich p-AlGaN superlattices, which exhibit a great improvement of the carrier injection efficiency and light extraction efficiency, thus leading to a 55.7% increase of the light output power. This study provides a solution for p-type doping of Al-rich AlGaN, and also sheds light on solving the doping asymmetry issue in general for wide-gap semiconductors.
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