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Marta Rio Calvo et al.
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J. G. Coutard et al.
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C. Cornet et al.
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Z. Loghmari et al.
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Ying Xue et al.
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Jennifer Selvidge et al.
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Laura Monge-Bartolome et al.
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Jinkwan Kwoen et al.
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Roger Helkey et al.
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Bei Shi et al.
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Q. Durlin et al.
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Bei Shi et al.
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Shujie Pan et al.
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Long Wavelength (λ > 17 μm) Distributed Feedback Quantum Cascade Lasers Operating in a Continuous Wave at Room Temperature
Hoang Nguyen Van et al.
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Direct MBE growth of metamorphic nBn infrared photodetectors on 150mm Ge-Si substrates for heterogeneous integration
Joel M. Fastenau et al.
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Yejin Zhang et al.
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Alan Y. Liu et al.
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All MBE grown InAs/GaAs quantum dot lasers on on-axis Si (001)
Jinkwan Kwoen et al.
OPTICS EXPRESS (2018)
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Si Zhu et al.
OPTICS EXPRESS (2018)
Anti phase boundary free GaSb layer grown on 300 mm (001)-Si substrate by metal organic chemical vapor deposition
T. Cerba et al.
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Universal description of III-V/Si epitaxial growth processes
I. Lucci et al.
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Wen-Qi Wei et al.
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Rowel Go et al.
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Jean-Marc Fedeli et al.
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Bernardette Kunert et al.
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Quantum cascade lasers grown on silicon
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Delphine Marris-Morini et al.
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Germanium Mid-Infrared Photonic Devices
Goran Z. Mashanovich et al.
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The HITRAN2016 molecular spectroscopic database
I. E. Gordon et al.
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Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics
Li Qiang et al.
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Demonstrating antiphase domain boundary-free GaAs buffer layer on zero off-cut Si (001) substrate for interfacial misfit dislocation GaSb film by metalorganic chemical vapor deposition
Minh Thien Huu Ha et al.
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Broad wavelength coverage 2.3 μm III-V-on-silicon DFB laser array
Ruijun Wang et al.
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Silicon photonic platforms for mid-infrared applications [Invited]
Ting Hu et al.
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Quantum cascade lasers transfer-printed on silicon-on-sapphire
Seungyong Jung et al.
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Epitaxial growth of GaSb on V-grooved Si (001) substrates with an ultrathin GaAs stress relaxing layer
Qiang Li et al.
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Room-temperature continuous-wave operation in the telecom wavelength range of GaSb-based lasers monolithically grown on Si
A. Castellano et al.
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Monolithically integrated mid-IR interband cascade laser and photodetector operating at room temperature
Hossein Lotfi et al.
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Eric Tournie et al.
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Siming Chen et al.
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Ruijun Wang et al.
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R. Alcotte et al.
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Anti-phase boundaries-Free GaAs epilayers on quasi-nominal Ge-buffered silicon substrates
Y. Bogumilowicz et al.
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Qiang Li et al.
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Alexei N. Baranov et al.
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Mingchu Tang et al.
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Silicon surface preparation for III-V molecular beam epitaxy
K. Madiomanana et al.
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Room-temperature InP distributed feedback laser array directly grown on silicon
Zhechao Wang et al.
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Heterogeneously integrated 2.0 μm CW hybrid silicon lasers at room temperature
Alexander Spott et al.
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Quantum dot lasers for silicon photonics [Invited]
Alan Y. Liu et al.
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Alan Y. Liu et al.
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Benedikt Schwarz et al.
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P. Apiratikul et al.
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Recombination channels in 2.4-3.2 μm GaInAsSb quantum-well lasers
K. S. Gadedjisso-Tossou et al.
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N. Hattasan et al.
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CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE (2012)
III-Vs on Si for photonic applications-A monolithic approach
Zhechao Wang et al.
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Continuous-wave operation above room temperature of GaSb-based laser diodes grown on Si
J. R. Reboul et al.
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GaP-nucleation on exact Si (001) substrates for III/V device integration
Kerstin Volz et al.
JOURNAL OF CRYSTAL GROWTH (2011)
Characterization of antiphase domains on GaAs grown on Ge substrates by conductive atomic force microscopy for photovoltaic applications
B. Galiana et al.
SOLAR ENERGY MATERIALS AND SOLAR CELLS (2011)
Quantum cascade lasers emitting near 2.6 μm
O. Cathabard et al.
APPLIED PHYSICS LETTERS (2010)
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Hyunhyub Ko et al.
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J. B. Rodriguez et al.
APPLIED PHYSICS LETTERS (2009)
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J. B. Rodriguez et al.
APPLIED PHYSICS LETTERS (2009)
Simultaneous interfacial misfit array formation and antiphase domain suppression on miscut silicon substrate
S. H. Huang et al.
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Growth of InAs/Sb: GaAs quantum dots on silicon substrate with high density and efficient light emission in the 1.3 μm band
Lin Li et al.
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S. I. Rybchenko et al.
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N. Deguffroy et al.
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C. Lauer et al.
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Y. H. Kim et al.
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SH Huang et al.
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Heteroepitaxial growth of GaSb on Si(001) substrates
K Akahane et al.
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Very-low-threshold 2.4-μm GaInAsSb-AlGaAsSb laser diodes operating at room temperature in the continuous-wave regime
A Salhi et al.
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E Selvig et al.
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