4.6 Article

Distinct UV-Visible Responsivity Enhancement of GaAs Photodetectors via Monolithic Integration of Antireflective Nanopillar Structure and UV Absorbing IGZO Layer

期刊

ADVANCED OPTICAL MATERIALS
卷 10, 期 13, 页码 -

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adom.202200062

关键词

antireflective; gallium arsenide; indium gallium zinc oxide; metal-assisted chemical etching; photodetection; ultraviolet-visible

资金

  1. A*STAR, Singapore, Advanced Manufacturing and Engineering (AME) Young Individual Research Grant [A2084c0066]
  2. Ministry of Education, Singapore [T2EP50120-0003, Tier 1-2020-T1-002-020 (RG136/20)]
  3. Nanyang NanoFabrication Centre (N2FC)

向作者/读者索取更多资源

A monolithic integration strategy combining nanopillar antireflective structure and IGZO ultraviolet absorbing layer was proposed to enhance the ultraviolet-visible spectral responsivity of GaAs photodetectors. Significant responsivity enhancement was achieved, providing great promises for advanced GaAs-based ultraviolet-visible optoelectronics.
Broadband ultraviolet-visible photodetection has been attracting growing research interests in fields of environment, energy, and imaging. Considering the suitable bandgap and high absorption coefficient, GaAs is one of the best candidates for ultraviolet-visible photodetection. In this work, a monolithic integration strategy of nanopillar antireflective structure and InGaZnO (IGZO) ultraviolet absorbing layer is proposed to enhance the ultraviolet-visible spectral responsivity of GaAs photodetectors. Both nanopillar topography and IGZO layer exhibit antireflective performance, leading to the enhancement of the light absorption and responsivity of the photodetectors. By the combination of nanopillar structure and IGZO layer, a distinct responsivity enhancement of more than one-order magnitude covering 300-800 nm wavelength range is realized compared with planar GaAs photodetectors. This work offers great promises for advanced GaAs-based ultraviolet-visible optoelectronics.

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