期刊
ADVANCED OPTICAL MATERIALS
卷 10, 期 13, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adom.202200062
关键词
antireflective; gallium arsenide; indium gallium zinc oxide; metal-assisted chemical etching; photodetection; ultraviolet-visible
资金
- A*STAR, Singapore, Advanced Manufacturing and Engineering (AME) Young Individual Research Grant [A2084c0066]
- Ministry of Education, Singapore [T2EP50120-0003, Tier 1-2020-T1-002-020 (RG136/20)]
- Nanyang NanoFabrication Centre (N2FC)
A monolithic integration strategy combining nanopillar antireflective structure and IGZO ultraviolet absorbing layer was proposed to enhance the ultraviolet-visible spectral responsivity of GaAs photodetectors. Significant responsivity enhancement was achieved, providing great promises for advanced GaAs-based ultraviolet-visible optoelectronics.
Broadband ultraviolet-visible photodetection has been attracting growing research interests in fields of environment, energy, and imaging. Considering the suitable bandgap and high absorption coefficient, GaAs is one of the best candidates for ultraviolet-visible photodetection. In this work, a monolithic integration strategy of nanopillar antireflective structure and InGaZnO (IGZO) ultraviolet absorbing layer is proposed to enhance the ultraviolet-visible spectral responsivity of GaAs photodetectors. Both nanopillar topography and IGZO layer exhibit antireflective performance, leading to the enhancement of the light absorption and responsivity of the photodetectors. By the combination of nanopillar structure and IGZO layer, a distinct responsivity enhancement of more than one-order magnitude covering 300-800 nm wavelength range is realized compared with planar GaAs photodetectors. This work offers great promises for advanced GaAs-based ultraviolet-visible optoelectronics.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据