Novel Negative Capacitance Appeared in all Frequencies in Au/AlCu/SiO2/p-Si/Al Structure

To the best of our knowledge. The current work shows that negative capacitance exists at all frequencies, contrary to what is claimed in the literature, which states that negative capacitance only exists at high or low frequencies. In this paper, Au/AlCu/SiO2/p-Si/Al structure was epitaxial grown by the liquid phase epitaxial growth technique. The structural characterization was studied using an X-ray diffraction pattern. The capacitance and conductance behavior was studied using I-V and C-V measurements at various temperatures, voltages, and frequencies. Negative capacitance appears at all frequencies ranging from low to high; moreover, capacitance has both positive and negative values at all frequencies, while the conductance has positive values only in all frequencies. The current-voltage characterization was used to investigation the ideality factor, barrier height, and series resistance. The barrier height and Richard constant were estimated, through investigating the current conduction mechanism of Au/AlCu/SiO2/p-Si/Al.

Automated summary

This study demonstrates the existence of negative capacitance at all frequencies and reveals that capacitance values can be both positive and negative across all frequencies, while conductance values are positive only. The structural and electrical characterization of the Au/AlCu/SiO2/p-Si/Al structure was investigated to understand the conduction mechanism.