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Atomic Vacancies in Transition Metal Dichalcogenides: Properties, Fabrication, and Limits

期刊

CHEMPLUSCHEM
卷 87, 期 3, 页码 -

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/cplu.202100562

关键词

atomic defects; doping; surface chemistry; thin films; transition metal dichalcogenides

资金

  1. Consiglio Nazionale delle Ricerche within the CRUI-CARE Agreement
  2. [2017YH9MRK]

向作者/读者索取更多资源

Structural defects in materials have a significant impact on their physical properties and can generate various functionalities, making them valuable for technological applications. This review focuses on the properties generated by atomic vacancies in 2D compounds and thin films of transition metal dichalcogenides, discussing their formation methods, engineering approaches, advantages, limitations, and current challenges.
Structural defects, such as heteroatoms or atomic vacancies, are always present in materials and significantly affect their physical properties, in both positive or unwanted ways. Interestingly, defects generate an impressive range of functionalities in many materials, such as catalysis, electrical and thermal conductivity tuning, thermoelectricity, enhanced ion storage, magnetism, and others. These properties enable the use of defective materials in a great variety of technological applications. Here we review the principal properties generated by atomic vacancies in 2D compounds and thin films of transition metal dichalcogenides and the most consolidated methods for their formation and engineering. Eventually, we critically analysed the most important advantages, the limits and the current open challenges.

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