期刊
AIP ADVANCES
卷 12, 期 4, 页码 -出版社
AIP Publishing
DOI: 10.1063/5.0081221
关键词
-
资金
- Ministry of Science and Technology of Taiwan, ROC [MOST 110-2221-E002-140, MOST 110-2622-8-002-014]
This study investigates the coupling phenomenon between two Al/SiO2/Si(p) metal-insulator-semiconductor tunneling diodes, revealing that the coupling effect occurs earlier with thinner oxide thickness and the coupling sensitivity is enhanced.
Coupling phenomenon between two Al/SiO2/Si(p) metal-insulator-semiconductor (MIS) tunneling diodes (TD) with various thin oxide thicknesses was studied in detail. When the bias voltage at one MIS TD is positive enough, the saturation currents of the two neighboring MIS TDs with concentric gate structures would be approximately the same due to saturation current coupling effect though the areas of these two devices are different. With thinner oxide, the saturation current coupling effect occurs earlier. This result indicates an enhancement of coupling sensitivity between two neighboring MIS TDs with thinner oxide. A physical mechanism of lateral minority carrier flow attracted by the fringing field was given to explain this phenomenon. Moreover, this oxide thickness dependent phenomenon of coupling effect was confirmed by capacitance-voltage (C-V) characteristics, and the fringing field extension and strengthening were clarified by 2D TCAD simulation. (C) 2022 Author(s).
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据