Temperature dependence of tunnel magnetoresistance in serial magnetic tunnel junctions

Magnetic tunnel junctions have been widely used in various applications, such as magnetic sensors and magnetic random-access memories. In the practical application of MTJs, they are usually used in series toward high sensitivity and high stability, especially for sensor applications. In this paper, serial MTJs devices on 8 in. wafers were fabricated. The temperature dependence of the tunnel magnetoresistance ratio, resistances in parallel and antiparallel configurations, and dynamic conductance were systematically investigated. The results of serial MTJs devices are consistent with a single MTJ device. This research suggests that serial MTJs can be directly used to investigate the magnetic tunneling properties of MTJ stacks.(C) 2022 Author(s).All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY)license (http://creativecommons.org/licenses/by/4.0/).

Automated summary

This paper investigates the temperature dependence and performance of serial magnetic tunnel junctions (MTJs) on 8-inch wafers. The results show that the properties of serial MTJs are consistent with individual MTJ devices, indicating their suitability for studying the magnetic tunneling properties of MTJ stacks.