Tuning band gap and enhancing optical functions of AGeF3 (A = K, Rb) under pressure for improved optoelectronic applications

The current study diligently analyzes the physical characteristics of halide perovskites AGeF(3) (A = K, Rb) under hydrostatic pressure using density functional theory. The goal of this research is to reduce the electronic band gap of AGeF(3) (A = K, Rb) under pressure in order to improve the optical characteristics and assess the compounds' suitability for optoelectronic applications. The structural parameters exhibit a high degree of precision, which correlates well with previously published work. In addition, the bond length and lattice parameters decrease significantly leading to a stronger interaction between atoms. The bonding between K(Rb)-F and Ge-F reveal ionic and covalent nature, respectively, and the bonds become stronger under pressure. The application of hydrostatic pressure demonstrates remarkable changes in the optical absorption and conductivity. The band gap becomes lower with the increment of pressure, resulting in better conductivity. The optical functions also predict that the studied materials might be used in a variety of optoelectronic devices operating in the visible and ultraviolet spectrum. Interestingly, the compounds become more suitable to be used in optoelectronic applications under pressure. Moreover, the external pressure has profound dominance on the mechanical behavior of the titled perovskites, which make them more ductile and anisotropic.

Automated summary

This study investigates the physical characteristics of AGeF(3) (A = K, Rb) under hydrostatic pressure using density functional theory. The research aims to reduce the electronic band gap of AGeF(3) to improve its optical properties for optoelectronic applications. The results show that the structural parameters are in line with previous studies, and the bonding between atoms becomes stronger under pressure. The application of hydrostatic pressure leads to changes in optical absorption and conductivity, with a lower band gap and improved conductivity observed. The study suggests that AGeF(3) may be suitable for use in optoelectronic devices operating in the visible and ultraviolet spectrum, and the compounds become more ductile and anisotropic under pressure.