Single-shot femtosecond bulk micromachining of silicon with mid-IR tightly focused beams

Being the second most abundant element on earth after oxygen, silicon remains the working horse for key technologies for the years. Novel photonics platform for high-speed data transfer and optical memory demands higher flexibility of the silicon modification, including on-chip and in-bulk inscription regimes. These are deepness, three-dimensionality, controllability of sizes and morphology of created modifications. Mid-IR (beyond 4 mu m) ultrafast lasers provide the required control for all these parameters not only on the surface (as in the case of the lithographic techniques), but also inside the bulk of the semiconductor, paving the way to an unprecedented variety of properties that can be encoded via such an excitation. We estimated the deposited energy density as 6 kJ cm(-3) inside silicon under tight focusing of mid-IR femtosecond laser radiation, which exceeds the threshold value determined by the specific heat of fusion (similar to 4 kJ cm(-3)). In such a regime, we successfully performed single-pulse silicon microstructuring. Using third-harmonic and near-IR microscopy, and molecular dynamics, we demonstrated that there is a low-density region in the center of a micromodification, surrounded by a ring with higher density, that could be an evidence of its micro-void structure. The formation of created micromodification could be controlled in situ using third-harmonic generation microscopy. The numerical simulation indicates that single-shot damage becomes possible due to electrons heating in the conduction band up to 8 eV (mean thermal energy) and the subsequent generation of microplasma with an overcritical density of 8.5 x 10(21) cm(-3). These results promise to be the foundation of a new approach of deep three-dimensional single-shot bulk micromachining of silicon.

Automated summary

Silicon, as the second most abundant element on earth after oxygen, remains crucial for key technologies. The demand for higher flexibility of silicon modification has led to the use of mid-IR ultrafast lasers for on-chip and in-bulk inscription. These lasers provide control over deepness, three-dimensionality, and size and morphology of created modifications, paving the way for new approaches in silicon micromachining.