New n-p Junction Floating Gate to Enhance the Operation Performance of a Semiconductor Memory Device

To lower the charge leakage of a floating gate device and improve the operation performance of memory devices toward a smaller structure size and a higher component capability, two new types of floating gates composed of pn-type polysilicon or np-type polysilicon were developed in this study. Their microstructure and elemental compositions were investigated, and the sheet resistance, threshold voltages and erasing voltages were measured. The experimental results and charge simulation indicated that, by forming an n-p junction in the floating gate, the sheet resistance was increased, and the charge leakage was reduced because of the formation of a carrier depletion zone at the junction interface serving as an intrinsic potential barrier. Additionally, the threshold voltage and erasing voltage of the np-type floating gate were elevated, suggesting that the performance of the floating gate in the operation of memory devices can be effectively improved without the application of new materials or changes to the physical structure.

Automated summary

Two new types of floating gates composed of pn-type polysilicon or np-type polysilicon have been developed in this study to lower charge leakage and improve the operation performance of memory devices. By forming an n-p junction in the floating gate, the sheet resistance is increased and charge leakage is reduced, leading to improved performance without the need for new materials or changes to the physical structure.