期刊
MATERIALS
卷 15, 期 11, 页码 -出版社
MDPI
DOI: 10.3390/ma15113845
关键词
high pressure; lone-pair electrons; ferroelectric semiconductor; photocurrent
类别
资金
- Natural Science Foundation for the Youth (NSFY) [12004016]
This research observed an enhancement in the photocurrent of SbSI by regulating the lone-pair electrons (LPEs) through pressure. The reconfiguration of LPEs under pressure disrupted the inversion symmetry in the crystal structure and resulted in an optimum bandgap. The increased polarization caused by the stereochemical expression of LPEs led to a significant enhancement in the photocurrent at 14 GPa. This study enriches the understanding of structure-property relationships and provides a unique approach to designing ferroelectric-photovoltaic materials.
Understanding the relationships between the local structures and physical properties of low-dimensional ferroelectrics is of both fundamental and practical importance. Here, pressure-induced enhancement in the photocurrent of SbSI is observed by using pressure to regulate the lone-pair electrons (LPEs). The reconfiguration of LPEs under pressure leads to the inversion symmetry broken in the crystal structure and an optimum bandgap according to the Shockley-Queisser limit. The increased polarization caused by the stereochemical expression of LPEs results in a significantly enhanced photocurrent at 14 GPa. Our research enriches the foundational understanding of structure-property relationships by regulating the stereochemical role of LPEs and offers a distinctive approach to the design of ferroelectric-photovoltaic materials.
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