4.8 Article

Rationally Designed Sodium Chromium Vanadium Phosphate Cathodes with Multi-Electron Reaction for Fast-Charging Sodium-Ion Batteries

期刊

ADVANCED ENERGY MATERIALS
卷 12, 期 25, 页码 -

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/aenm.202201065

关键词

fast-charging; multielectron reaction; NASICON; Sodium-ion batteries

资金

  1. China Scholarship Council/University College London
  2. Natural Science Foundation of Hunan Province, China [2020JJ1007]

向作者/读者索取更多资源

In this study, a reduced graphene oxide supported NASICON Na3Cr0.5V1.5(PO4)(3) cathode with ultrafast and ultrastable sodium storage properties was designed. It exhibited high energy density, excellent fast-charging performance, and a three-electron transfer reaction based on fully activated V5+/V4+, V4+/V3+, V3+/V2+ couples.
Sodium super-ionic conductor (NASICON)-structured phosphates are emerging as rising stars as cathodes for sodium-ion batteries. However, they usually suffer from a relatively low capacity due to the limited activated redox couples and low intrinsic electronic conductivity. Herein, a reduced graphene oxide supported NASICON Na3Cr0.5V1.5(PO4)(3) cathode (VC/C-G) is designed, which displays ultrafast (up to 50 C) and ultrastable (1 000 cycles at 20 C) Na+ storage properties. The VC/C-G can reach a high energy density of approximate to 470 W h kg(-1) at 0.2 C with a specific capacity of 176 mAh g(-1) (equivalent to the theoretical value); this corresponds to a three-electron transfer reaction based on fully activated V5+/V4+, V4+/V3+, V3+/V2+ couples. In situ X-ray diffraction (XRD) results disclose a combination of solid-solution reaction and biphasic reaction mechanisms upon cycling. Density functional theory calculations reveal a narrow forbidden-band gap of 1.41 eV and a low Na+ diffusion energy barrier of 0.194 eV. Furthermore, VC/C-G shows excellent fast-charging performance by only taking approximate to 11 min to reach 80% state of charge. The work provides a widely applicable strategy for realizing multi-electron cathode design for high-performance SIBs.

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