Maximizing the performance of n-type Mg3Bi2 based materials for room-temperature power generation and thermoelectric cooling

Although the thermoelectric effect was discovered around 200 years ago, the main application in practice is thermoelectric cooling using the traditional Bi2Te3. The related studies of new and efficient room-temperature thermoelectric materials and modules have, however, not come to fruition yet. In this work, the electronic properties of n-type Mg3.2Bi1.5Sb0.5 material are maximized via delicate microstructural design with the aim of eliminating the thermal grain boundary resistance, eventually leading to a high zT above 1 over a broad temperature range from 323 K to 423 K. Importantly, we further demonstrated a great breakthrough in the non-Bi2Te3 thermoelectric module, coupled with the high-performance p-type alpha-MgAgSb, for room-temperature power generation and thermoelectric cooling. A high conversion efficiency of similar to 2.8% at the temperature difference of 95 K and a maximum temperature difference of 56.5 K are experimentally achieved. If the interfacial contact resistance is further reduced, our non-Bi2Te3 module may rival the long-standing champion commercial Bi2Te3 system. Overall, this work represents a substantial step towards the real thermoelectric application using non-Bi2Te3 materials and devices.

Automated summary

This work maximizes the electronic properties of the n-type Mg3.2Bi1.5Sb0.5 material through delicate microstructural design, resulting in a high zT value over a broad temperature range. Additionally, a breakthrough is achieved in the non-Bi2Te3 thermoelectric module for room-temperature power generation and cooling, indicating potential commercial applications.