4.8 Article

Understanding self-assembly at molecular level enables controlled design of DNA G-wires of different properties

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NATURE COMMUNICATIONS
卷 13, 期 1, 页码 -

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NATURE PORTFOLIO
DOI: 10.1038/s41467-022-28726-6

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资金

  1. Slovenian Research Agency (ARRS) [P1-0242, P1-0192, P20393, J1-7108, J1-1704, J7-9399]
  2. CERIC-ERIC
  3. Austrian Science Fund (FWF) [P20393] Funding Source: Austrian Science Fund (FWF)

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In this study, the authors used nuclear magnetic resonance and molecular dynamic simulations to investigate the assembly principles and self-assembly process of G-wires. The results provide insight into the impact of loop residues on the length of G-wires and offer a fundamental understanding for the future design of nanomaterials with specific properties.
G-wire structures have potential applications in bio-nanotechnology, however, this is limited by a lack of understanding about the assembly process and structures formed. Here, the authors use nuclear magnetic resonance and molecular dynamic simulations to understand the guiding principles of G-wire assembly. A possible engineering of materials with diverse bio- and nano-applications relies on robust self-assembly of oligonucleotides. Bottom-up approach utilizing guanine-rich DNA oligonucleotides can lead to formation of G-wires, nanostructures consisting of continuous stacks of G-quartets. However, G-wire structure and self-assembly process remain poorly understood, although they are crucial for optimizing properties needed for specific applications. Herein, we use nuclear magnetic resonance to get insights at molecular level on how chosen short, guanine-rich oligonucleotides self-assemble into G-wires, whereas complementary methods are used for their characterization. Additionally, unravelling mechanistic details enable us to guide G-wire self-assembly in a controlled manner. MD simulations provide insight why loop residues with considerably different properties, i.e., hydrogen-bond affinity, stacking interactions, electronic effects and hydrophobicity extensively increase or decrease G-wire length. Our results provide fundamental understanding of G-wire self-assembly process useful for future design of nanomaterials with specific properties.

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