期刊
NATURE COMMUNICATIONS
卷 13, 期 1, 页码 -出版社
NATURE PORTFOLIO
DOI: 10.1038/s41467-022-28999-x
关键词
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资金
- National Key R&D Program of China [2017YFA0204901, 2021YFA1200101, 2016YFA0300902, 2019YFA0308500]
- National Natural Science Foundation of China [22150013, 21727806, 21933001, 51991344, 91850120, 11934003]
- Natural Science Foundation of Beijing [Z181100004418003, 2222009]
- Strategic Priority Research Program (B) of Chinese Academy of Sciences [XDB330301]
- University of Rennes 1
- CNRS
- Agence Nationale de la Recherche [RuOxLux-ANR-12-BS07-0010-01]
- Natural Sciences and Engineering Research Council (NSERC) of Canada
- Fonds de recherche du Quebec-Nature et technologies (FRQNT) of the Province of Quebec
- Frontiers Science Center for New Organic Matter at Nankai University [63181206]
- Tencent Foundation
The study presents a robust solid-state single-molecule field-effect transistor using graphene electrodes and a metal back-gate electrode. The transistor exhibits high on/off ratio and reversible photoswitching function, making it a potential alternative to conventional silicon-based transistors.
Conventional silicon-based transistors, which sit at the heart of every computer, are fast approaching the limit of miniaturisation. Here, Meng et al demonstrate a field-effect transistor composed of a single rutheniumdiarylethene molecule with large on/off ratio. As conventional silicon-based transistors are fast approaching the physical limit, it is essential to seek alternative candidates, which should be compatible with or even replace microelectronics in the future. Here, we report a robust solid-state single-molecule field-effect transistor architecture using graphene source/drain electrodes and a metal back-gate electrode. The transistor is constructed by a single dinuclear ruthenium-diarylethene (Ru-DAE) complex, acting as the conducting channel, connecting covalently with nanogapped graphene electrodes, providing field-effect behaviors with a maximum on/off ratio exceeding three orders of magnitude. Use of ultrathin high-k metal oxides as the dielectric layers is key in successfully achieving such a high performance. Additionally, Ru-DAE preserves its intrinsic photoisomerisation property, which enables a reversible photoswitching function. Both experimental and theoretical results demonstrate these distinct dual-gated behaviors consistently at the single-molecule level, which helps to develop the different technology for creation of practical ultraminiaturised functional electrical circuits beyond Moore's law.
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