期刊
NATURE COMMUNICATIONS
卷 13, 期 1, 页码 -出版社
NATURE PORTFOLIO
DOI: 10.1038/s41467-022-29756-w
关键词
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资金
- Wearable Platform Materials Technology Center (WMC) - National Research Foundation of Korea (NRF) by the Korean Government (MSIT) [NRF-2022R1A5A6000846]
- NRF - MSIT [2021R1A2B5B03001416, 2020R1A2C1101647]
- National Research Foundation of Korea [2020R1A2C1101647] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Researchers have developed a multi-valued logic circuit based on heterojunction transistors, which utilizes nonvolatile floating-gate flash memory to control channel conductance and achieve stable operation of ternary logic inverters. The 3D inverters, fabricated in a vertically stacked form, demonstrate high-density integration and device uniformity. The organic flash memory exhibits long retention characteristics, ensuring long-term stability of the 3D inverters. This study provides valuable insights for achieving high-performance multi-valued logic circuits.
Multi-valued logic (MVL) circuits based on heterojunction transistor (HTR) have emerged as an effective strategy for high-density information processing without increasing the circuit complexity. Herein, an organic ternary logic inverter (T-inverter) is demonstrated, where a nonvolatile floating-gate flash memory is employed to control the channel conductance systematically, thus realizing the stabilized T-inverter operation. The 3-dimensional (3D) T-inverter is fabricated in a vertically stacked form based on all-dry processes, which enables the high-density integration with high device uniformity. In the flash memory, ultrathin polymer dielectrics are utilized to reduce the programming/erasing voltage as well as operating voltage. With the optimum programming state, the 3D T-inverter fulfills all the important requirements such as full-swing operation, optimum intermediate logic value (similar to V-DD/2), high DC gain exceeding 20 V/V as well as low-voltage operation (< 5 V). The organic flash memory exhibits long retention characteristics (current change less than 10% after 10(4)s), leading to the long-term stability of the 3D T-inverter. We believe the 3D T-inverter employing flash memory developed in this study can provide a useful insight to achieve high-performance MVL circuits.
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