4.5 Article

Metal-Semiconductor-Metal Photodetectors on a GeSn-on-Insulator Platform for 2 μm Applications

期刊

IEEE PHOTONICS JOURNAL
卷 14, 期 3, 页码 -

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOT.2022.3164943

关键词

Photodetectors; Germanium; Metals; Strain; Silicon; Optical waveguides; Plasma temperature; Germanium-tin alloys; germanium-tin on insulator; metal-semiconductor-metal photodetector

资金

  1. National Research Foundation, Singapore, through Competitive Research Program under CRP Award [NRF-CRP19-2017-01]
  2. Ministry of Education AcRF Tier 2 [T2EP50121-0001, MOR-000180-01]
  3. Ministry of Education AcRF Tier 1 [2021-T1-002-031, RG112/21]

向作者/读者索取更多资源

This work demonstrates metal-semiconductor-metal photodetectors on the Ge0.91Sn0.09-on-insulator (GeSnOI) platform, with the potential to detect wavelengths beyond 2,200 nm, low dark current density, and high bandwidth.
In this work, the metal-semiconductor-metal photodetectors were demonstrated on the Ge0.91Sn0.09-on-insulator (GeSnOI) platform. The responsivity was 0.24 and 0.06 A/W at wavelengths of 1,600 and 2,003 nm, respectively. Through a systematic study, it is revealed that the photodetectors can potentially detect wavelength beyond 2,200 nm. The dark current density was measured to be 4.6 A/cm(2) for GeSnOI waveguide-shaped photodetectors. The 3 dB bandwidth was observed to be 1.26 and 0.81 GHz at 1,550 and 2,000 nm wavelengths, respectively. This work opens up an opportunity for low-cost 2 mu m wavelength photodetection on the GeSn/Ge interface-free GeSnOI platform.

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