期刊
SURFACE & COATINGS TECHNOLOGY
卷 434, 期 -, 页码 -出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.surfcoat.2022.128199
关键词
Gallium nitride; Molybdenum disulfide; Hetero-structure; Nitridation; Molecule beam epitaxy; Van der Waals epitaxy
资金
- Ministry of Science and Technology, Taiwan [MOST 109-2221-E-259-004-MY3, MOST 1102634-F-009-027]
- Ministry of Research and Technology, Research Council
- National Innovation Republic of Indonesia [089/E4.1/AK.04.PT/2021]
- Center for the Semiconductor Technology Research from the Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by Ministry of Education (MOE) in Taiwan
This study investigates the growth of GaN films on layered 2D-MoS2/c-sapphire substrate using a plasma-assisted molecular beam epitaxy system. The pre-nitridation process and growth duration are found to enhance the optical properties and crystal quality of the GaN films. The study also demonstrates a potential solution for the future applications of GaN-based devices.
The growth of GaN films on layered 2D-MoS2/c-sapphire substrate by plasma-assisted molecular beam epitaxy system was investigated. Pre-nitridation process and deposition time as growth parameters were employed to exploit the heteroepitaxial growth of GaN films at the temperature of 700 degrees C. The characterizations of surface condition, surface morphology, chemical composition, optical properties, crystal orientation and quality of GaN epitaxial layers were conducted by reflection high energy electron diffraction (RHEED), scanning electron microscope (SEM), atomic force microscope (AFM), X-ray photoelectron Spectroscopy (XPS), Raman spectroscopy, photoluminescence spectroscopy (PL) and high-resolution X-ray diffraction (HR-XRD), respectively. The pre-nitridation process and growth duration can enhance the optical properties and crystal quality of GaN films on 2D-MoS2/c-plane sapphire. The pre-treatment of MoS(2)( )layer by nitrogen plasma before the growth, providing a wetting layer of nitrogen for GaN growth, can eliminate the oxygen contamination and reduce the defects in the films. Band-to-band emission of Wurtzite GaN with the bandgap of 3.5 eV can be improved by pre-nitridation process, and yellow band emission can be suppressed due to the elimination of defect states in the films. Meanwhile, the crystal orientation and quality can be improved by the pre-nitridation process and longer duration of growth time. This study demonstrates a van der Waals epitaxial GaN films on 2D-MoS2 layer with higher crystal quality by pre-nitridation process, and it provides a potential solution for the future applications of GaN-based devices.
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