期刊
SMALL
卷 18, 期 20, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.202107650
关键词
2D semiconductors; complementary field-effect transistors; MoS; (2); MoTe; (2); multi-bridge channel field-effect transistors
类别
资金
- National Key Research and Development Program [2021YFA1200500]
- Innovation Program of Shanghai Municipal Education Commission [2021-01-07-00-07E00077]
- Key Research Program of Frontier Sciences, CAS [ZDBS-LY-JSC015]
- Shanghai Municipal Science and Technology Commission [21DZ1100900]
- Shanghai Rising-star Program [20QA1402400]
- Program for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher Learning
- MOE innovation platform
This study successfully fabricated large-scale multi-bridge channel field-effect transistors (MBC-FETs) and complementary field-effect transistors (C-FETs) based on two-dimensional semiconductors. The MBC-FETs demonstrated higher drive current, carrier mobility, and smaller sub-threshold swing compared to single-gate MoS2 FETs. Furthermore, logic circuits and C-FET arrays were constructed, showing high voltage gain and direct conversion of light signals to electrical digital signals. These findings have significant implications for the application of two-dimensional semiconductors in next-generation circuits.
Two-dimentional semiconductors have shown potential applications in multi-bridge channel field-effect transistors (MBC-FETs) and complementary field-effect transistors (C-FETs) due to their atomic thickness, stackability, and excellent electrical properties. However, the exploration of MBC-FET and C-FET based on large-scale 2D semiconductors is still lacking. Here, based on a reliable vertical stacking of wafer-scale 2D semiconductors, large-scale MBC-FETs and C-FETs using n-type MoS2 and p-type MoTe2 are successfully fabricated. The drive current of an MBC-FET with two layers of MoS2 channel (20 mu m/10 mu m) is up to 60 mu A under 1 V bias. Compared with the single-gate MoS2 FET, the carrier mobility of MBC-FET is 2.3 times higher and the sub-threshold swing is 70% smaller. Furthermore, NAND and NOR logic circuits are also constructed based on two vertically stacked MoS2 channels. Then, C-FET arrays are fabricated by 3D integrating n-type MoS2 FET and p-type MoTe2 FET, which exhibit a voltage gain of 7 V/V when V-DD = 4 V. In addition, this C-FET device can directly convert light signals to an electrical digital signal within a single device. The demonstration of MBC-FET and C-FET based on large-scale 2D semiconductors will promote the application of 2D semiconductors in next-generation circuits.
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