期刊
SENSORS AND ACTUATORS A-PHYSICAL
卷 340, 期 -, 页码 -出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.sna.2022.113545
关键词
ZnO; Metal-semiconductor-metal; Photodetectors; MgO; Schottky barrier diode
资金
- Ministry of Science and Technology , Taiwan [110-2112-M-415-001]
- MOST
Magnesium oxide (MgO) was deposited on zinc oxide (ZnO) surface to enhance the performance of visible-blind ultraviolet (UV) metal-semiconductor-metal photodetectors (MSM-PDs). The MgO capping layer greatly reduces the dark current and increases the photo/dark current ratio in the MSM-PDs. X-ray photoelectron spectroscopy analysis shows that the MgO film passivates the ZnO surface and improves the performance of the MSM-PDs.
Magnesium oxide (MgO) was deposited on zinc oxide (ZnO) surface to achieve a visible-blind ultraviolet (UV) metal-semiconductor-metal photodetectors (MSM-PDs). ZnO and MgO were prepared using a radio-frequency (RF) magnetron sputtering system. As compared to the MSM-PDs without the MgO capping layer, the dark current is greatly subdued by approximately four orders of magnitude in the MSM-PDs with MgO capping layer, which in turn largely increases the photo/dark current ratio from 102 to 105 by three orders in the MSM-PDs. The MgO capping layer enhances the ultraviolet/visible rejection ratio and largely raised the detectivity from 8.3 x 1010 to 1.03 x 1012 Jones in the prepared MSM-PDs. X-ray photoelectron spectroscopy shows that the oxygen vacancies on ZnO surface were compensated by the introduced oxygen atoms from MgO, forming a stable film that passivated the ZnO surface. The MgO capping layer greatly increases the Schottky barrier height (SBH) of an Au/ZnO Schottky barrier diode (SBD) from 0.58 to 0.93 eV for the Au/MgO/ZnO SBD. The raised SBH and suppressed surface defects drastically reduced the dark current and visible response of the prepared MSM-PDs.
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