Low-power silicon strain sensor based on CMOS current reference topology

A strain sensor inspired by a Widlar self-biased current source topology called fl -multiplier is developed to obtain a strain-dependent reference current with high supply rejection. The sensor relies on the piezoresistive effect in the silicon MOS transistors that form the current reference circuit. The device behavior is analytically computed and verified with experimental measurements under four-point bending test. A basic implementation with an integrated resistor reaches a strain sensitivity of 2.54 nA/mu epsilon (gauge factor of 324) for a temperature sensitivity of 52.06 nA/degrees C. A more advanced full-transistor circuit based on current subtraction principle is furthered implemented in order to reach strain sensitivity up to 12.02 nA/mu c (gauge factor of 1773) and temperature sensitivity of -28.72 nA/degrees C. This implementation includes a CMOS active load to tune the strain and temperature sensitivities with a total power consumption between 20 and 150 mu W.

Automated summary

A strain sensor inspired by a Widlar self-biased current source topology has been developed to obtain a strain-dependent reference current with high supply rejection. The sensor relies on the piezoresistive effect in silicon MOS transistors to form the current reference circuit. Experimental measurements and analytical calculations have verified the device behavior and demonstrated its effectiveness in measuring strain and temperature, with the ability to tune sensitivity using a CMOS active load.