GaN/AlN Multi-Quantum Wells Infrared Detector with Short-Wave Infrared Response at Room Temperature

GaN-based quantum well infrared detectors can make up for the weakness of GaAs-based quantum well infrared detectors for short-wave infrared detection. In this work, GaN/AlN (1.8 nm/1.8 nm) multi-quantum wells have been epitaxially grown on sapphire substrate using MBE technology. Meanwhile, based on this device structure, the band positions and carrier distributions of a single quantum well are also calculated. At room temperature, the optical response of the device is 58.6 mu A/W with a bias voltage of 0.5 V, and the linearity between the optical response and the laser power is R-2 = 0.99931. This excellent detection performance can promote the research progress of GaN-based quantum well infrared detectors in the short-wave infrared field.

Automated summary

This study successfully grew GaN/AlN multi-quantum wells on a sapphire substrate using MBE technology, and the results showed excellent optical response and linearity at room temperature, indicating great potential for research and application in short-wave infrared detection.