Single β-Ga2O3 nanowire back-gate field-effect transistor

In this work, a normally-on single-monocrystal beta-Ga2O3 nanowire (NW) back-gate field-effect transistor (FET) has been demonstrated by transferring metal-organic chemical vapor deposition-grown beta-Ga2O3 NWs on sapphire onto SiO2 (300 nm)/p(+)-Si substrate. When the gate voltage (V-G) exceeds -14 V, the device is pinched off, with an on/off ratio greater than 10(8) and a drain leakage current density as low as similar to 7.34 fA. The maximum field-effect carrier mobility for these n-doped single beta-Ga2O3 NW FETs reaches similar to 62.2 cm(2) (V s)(-1). A prompt degradation in the on/off ratio for these beta-Ga2O3 NW back-gate FETs is observed as the operation temperature increased up to 400 K. With strong evidence, the temperature-dependent degradation in the performance is determined by the activation of self-trapped holes and intrinsic vacancy-related defects, both of which would lead to a rapid increase in the channel leakage current at high temperatures.

Automated summary

In this work, a normally-on single-monocrystal beta-Ga2O3 nanowire back-gate field-effect transistor (FET) was successfully demonstrated. The FET showed a high on/off ratio and low leakage current density. However, the on/off ratio rapidly degraded at high temperatures due to the activation of self-trapped holes and intrinsic vacancy-related defects, leading to an increase in channel leakage current.