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Chemical imaging of oxide confinement layers in GaAs/AlxGa1-xAs VCSELs

SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2022)

Mechanical strain mapping of GaAs based VCSELs

Merwan Mokhtari et al.

Summary: This study investigates the strain field in mesa structures for oxide-confined VCSELs using polarization-resolved micro-photoluminescence measurement. The spatial distribution of anisotropic strain in VCSEL structures is correlated with the degree of polarization of the photoluminescence. The DOP method allows sensitive measurements of mechanical strain accumulated in VCSEL devices during different fabrication steps.

APPLIED PHYSICS LETTERS (2021)

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Article Engineering, Electrical & Electronic

One-Volt, Solution-Processed InZnO Thin-Film Transistors

Wensi Cai et al.

Summary: The study showed that IZO films annealed at 350 degrees Celsius exhibit the best performance, and with the use of a thin AlxOy layer as the gate dielectric, high-performance IZO TFTs were demonstrated. These devices have a high current on/off ratio, high mobility, and are close to the theoretical limit of subthreshold swing.

IEEE ELECTRON DEVICE LETTERS (2021)

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Article Engineering, Electrical & Electronic

Targeted defect analysis in VCSEL oxide windows using 3D slice and view

X. Sun et al.

Summary: This study utilized FIB-SEM technology to conduct high-resolution analysis of VCSEL devices, revealing that oxide aperture area and structural defects are major factors affecting the optical output power of the devices. The research provides a promising high-resolution (50 nm) 3D imaging method for analysis of complex semiconductor devices.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2021)

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Article Chemistry, Physical