Chemical imaging of oxide confinement layers in GaAs/AlxGa1-xAs VCSELs

The authors have studied the lateral oxidation of AlxGa1-xAs layers buried in vertical-cavity surface-emitting lasers using cross-sectional scanning transmission electron microscopy coupled with electron energy loss spectroscopy. Chemical maps and composition profiles of the oxidized AlOx layers have been produced. The sensitivity is such that trace compositions of a few % As and Ga can be detected in the AlOx with a spatial resolution of a few nanometers on the recorded chemical maps. To demonstrate the performance of the mapping technique, we compare results from an area in the vertical-cavity surface-emitting laser (VCSEL) which is pure AlxGa1-xAs to an oxidized area. These measurements are performed on a thin sample prepared by the focused ion beam technique within an actual VCSEL, which makes the mapping technique applicable for degradation investigations in devices at different stages of their lifetime. More generally, this measurement method is effective for detailed evaluation of AlOx layers and their fabrication process.

Automated summary

The lateral oxidation of AlxGa1-xAs layers buried in vertical-cavity surface-emitting lasers was studied using cross-sectional scanning transmission electron microscopy coupled with electron energy loss spectroscopy. The authors produced chemical maps and composition profiles of the oxidized AlOx layers. The sensitivity of the method allowed for the detection of trace compositions of a few % As and Ga in the AlOx with nanometer-scale spatial resolution on the recorded chemical maps.