Spatially-separated and photo-enhanced semiconductor corrosion processes for high-efficient and contamination-free electrochemical nanoimprint lithography

Free of any thermoplastic or photocuring resists, electrochemical nanoimprint lithography (ECNL) has emerged as an alternative nanoimprint way to fabricate three-dimensional micro/nano-structures (3D-MNSs) directly on a semiconductor wafer by a spatially-confined corrosion reaction induced by the metal/semiconductor contact potential. However, the consumption of electron acceptors in the ultrathin electrolyte between imprint mold and semiconductor wafer will slow down or even cease the corrosion rate. To solve this problem, we change the short-circuited corrosion cell into a spatially-separated primary cell: the imprint mold compacted gallium arsenide (GaAs) wafer in the anodic chamber while the platinum (Pt) plate connected to the imprint mold in the cathodic chamber. Thus, the GaAs corrosion rate will be stabilized in its limiting steady-state current density because of the abundant source of electron acceptors in the catholic chamber. The corrosion processes can be photo-enhanced by white-light illumination. Consequently, both the accuracy and the efficiency are promoted dramatically, which are demonstrated by the excellent performance of the fabricated binary optical elements. Moreover, the contamination problem caused by the electron acceptors is totally avoided. All the results prove that this novel ECNL mode is competitive and prospective in imprinting 3D-MNSs directly on semiconductor wafer.

Automated summary

This research proposes a new electrochemical nanoimprint lithography (ECNL) technique for direct fabrication of three-dimensional micro/nano-structures (3D-MNSs) on a semiconductor wafer. By changing the structure of the corrosion cell and utilizing photo-enhancement, the corrosion rate is stabilized, resulting in improved accuracy and efficiency.