期刊
SCIENCE
卷 376, 期 6597, 页码 1066-+出版社
AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/science.abj9979
关键词
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资金
- King Abdullah University of Science and Technology
- European Research Council (ERC) under the European Union [682675, 966764]
- Office of Naval Research [N00014-20-1-2104]
- Air Force Research Laboratory [FA9550-21-1-0460]
- European Research Council (ERC) [966764] Funding Source: European Research Council (ERC)
Memristive devices, which can change their resistance and memory state, have potential applications in various fields. However, there are still challenges to be addressed, including performance and reliability issues.
Memristive devices, which combine a resistor with memory functions such that voltage pulses can change their resistance (and hence their memory state) in a nonvolatile manner, are beginning to be implemented in integrated circuits for memory applications. However, memristive devices could have applications in many other technologies, such as non-von Neumann in-memory computing in crossbar arrays, random number generation for data security, and radio-frequency switches for mobile communications. Progress toward the integration of memristive devices in commercial solid-state electronic circuits and other potential applications will depend on performance and reliability challenges that still need to be addressed, as described here.
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