4.8 Article

Ferroelectric crystals with giant electro-optic property enabling ultracompact Q-switches

期刊

SCIENCE
卷 376, 期 6591, 页码 371-+

出版社

AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/science.abn7711

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资金

  1. National Natural Science Foundation of China [12074277, 51922083, 51831010, 51761145024, 12074092, 12004085]
  2. development programme of Shaanxi province [2019ZDLGY04-09]
  3. National Key R&D Program of China [2021YFE0115000]
  4. 111 Project [B14040]
  5. fellowship of China National Postdoctoral Program for Innovative Talents [BX20200111]
  6. Natural Science Foundation of Jiangsu Province [BK20201404]
  7. Australian Research Council [FT180100541]
  8. US National Science Foundation [DMR1744213]
  9. Materials Research Science and Engineering Center (MRSEC) [DMR-1420620]

向作者/读者索取更多资源

By synergistically designing the ferroelectric phase, crystal orientation, and poling technique, we developed crystals with extremely high electro-optic coefficients and eliminated light-scattering domain walls, achieving high transmittance and superior electro-optic performance.
Relaxor-lead titanate (PbTiO3) crystals, which exhibit extremely high piezoelectricity, are believed to possess high electro-optic (EO) coefficients. However, the optical transparency of relaxor-PbTiO3 crystals is severely reduced as a result of light scattering and reflection by domain walls, limiting electro-optic applications. Through synergistic design of a ferroelectric phase, crystal orientation, and poling technique, we successfully removed all light-scattering domain walls and achieved an extremely high transmittance of 99.6% in antireflection film-coated crystals, with an ultrahigh EO coefficient r(33) of 900 picometers per volt (pm V-1), >30 times as high as that of conventionally used EO crystals. Using these crystals, we fabricated ultracompact EO Q-switches that require very low driving voltages, with superior performance to that of commercial Q-switches. Development of these materials is important for the portability and low driving voltage of EO devices.

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