4.6 Article

Epitaxial growth and electronic structure of oxyhydride SrVO2H thin films

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JOURNAL OF APPLIED PHYSICS
卷 120, 期 8, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.4961446

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  1. Core Research for Evolutionary Science and Technology of the Japan Science and Technology Agency
  2. Japan Society for the Promotion of Science (JSPS) [25790054, 14J10064]
  3. Grants-in-Aid for Scientific Research [15H05424, 14J10064, 25287095, 15H02109, 16H02115, 25790054] Funding Source: KAKEN

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Oxyhydride SrVO2H epitaxial thin films were fabricated on SrTiO3 substrates via topotactic hydridation of oxide SrVO3 films using CaH2. Structural and composition analyses suggested that the SrVO2H film possessed one-dimensionally ordered V-H--V bonds along the out-of-plane direction. The synthesis temperature could be lowered by reducing the film thickness, and the SrVO2H film was reversible to SrVO3 by oxidation through annealing in air. Photoemission and X-ray absorption spectroscopy measurements revealed the V3+ valence state in the SrVO2H film, indicating that the hydrogen existed as hydride. Furthermore, the electronic density of states was highly suppressed at the Fermi energy, consistent with the prediction that tetragonal distortion induces metal to insulation transition. Published by AIP Publishing.

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