Boost in room temperature thermoelectric performance of PbSe: Alx through band modification and low densification

Optimization of the transport properties of PbSe to maximize its thermoelectric performance at room temperature has been achieved through a combination of elemental doping and low densification. Al doped PbSe (PbSe: Al-x; 0 <= x <= 0.06) with both lattice substitutional (Pb site) and interstitial occupation has been synthesized through solid state reaction. High Seebeck coefficient of-300 to 400 lV/K is noticed at 300 to 500 K. This, combined with the lower thermal conductivity of-1.20W/m K, provides an improved ZT value as high as-0.67 at 300K to the PbSe: Alx Also, by substituting Al in PbSe, maximum power factors of-20 to 26.6 lW/cm K-2 at 310K are produced. The high room temperature thermoelectric performance of PbSe: Al-x has been attributed to the mix contribution of the Al impurity states and the low densification. The strategy may be utilized to cost effective development of the low working temperature thermoelectric devices. Published by AIP Publishing.