期刊
JOURNAL OF APPLIED PHYSICS
卷 120, 期 6, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4960575
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资金
- National Science Foundation [DMR-1207342]
- Air Force Office of Scientific Research [FA9550-12-10494]
- Texas Advanced Computing Center
We investigate theoretically the oxidation stability of the Si(001) (2 x 1) reconstructed surface passivated by Sr. Using density functional theory, we find that the Sr surface with 1/2 monolayer of Sr is protected against oxidation. The presence of Sr delays the oxidation of the surface dimer, and even when the dimer is oxidized, O does not react with the back-bond, preventing the unwanted vertical growth of SiO2. We also show that 1/4 monolayer of Sr protects the Si surface in a different way. In the presence of 1/4 monolayer of Sr, O atoms are attracted to the Sr-Si dimer complexes, thus preventing the formation of SiO2. Published by AIP Publishing.
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