期刊
JOURNAL OF APPLIED PHYSICS
卷 120, 期 13, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4964251
关键词
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资金
- Dublin City University of SFI [SFI/09/IN.1/I2633]
- U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences [DE-AC02-98CH10886]
- National Institute of Standards and Technology
The electrical and chemical stability of Mo-InGaAs films for source-drain applications in transistor structures has been investigated. It was found that for 5 nm thick Mo films, the sheet resistance remains approximately constant with increasing anneal temperatures up to 500 degrees C. A combined hard x-ray photoelectron spectroscopy and x-ray absorption spectroscopy analysis of the chemical structure of the Mo-InGaAs alloy system as a function of annealing temperature showed that the interface is chemically abrupt with no evidence of inter-diffusion between the Mo and InGaAs layers. These results indicate the suitability of Mo as a thermally stable, low resistance source-drain contact metal for InGaAs-channel devices. Published by AIP Publishing.
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