期刊
JOURNAL OF APPLIED PHYSICS
卷 120, 期 5, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4958939
关键词
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资金
- Ministry of Science, ICT & Future Planning, Republic of Korea [IBS-R011-D1-2016-A00] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We report the controllable nanosized local thinning of multi-layer (2L and 3 L)-thickness MoS2 films down to the monolayer (1 L) thickness using the simple method of annealing in a dry oxygen atmosphere. The annealing temperature was optimized in the range of 240 degrees C to 270 degrees C for 1.5h, and 1L thick nanosized pits were developed on the uniform film of the 2 L and 3 L MoS2 grown using the chemical vapor deposition method. We characterized the formation of the 1 L nanosized pits using nanoscale confocal photoluminescence (PL) and Raman spectroscopy. We observed that the PL intensity increased and the Raman frequency shifted, representative of the characteristics of 1 L MoS2 films. A subsequent hydrogen treatment process was useful for removing the oxygen-induced doping effect resulting from the annealing. Published by AIP Publishing.
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