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I. P. Marko et al.
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A. J. Ptak et al.
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F. Bastiman et al.
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Yuxin Song et al.
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Molecular-beam epitaxy of GaNAsBi layer for temperature-insensitive wavelength emission
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Gan Feng et al.
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Valence-band anticrossing in mismatched III-V semiconductor alloys
K. Alberi et al.
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Giant spin-orbit bowing in GaAs1-xBix
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EC Young et al.
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T Kawamura et al.
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