相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Influence of frequency and gamma irradiation on the electrical characteristics of Er2O3, Gd2O3, Yb2O3, and HfO2 MOS-based devices
Aysegul Kahraman et al.
JOURNAL OF MATERIALS SCIENCE (2020)
Determination of frequency and voltage dependence of electrical properties of Al/(Er2O3/SiO2/n-Si)/Al MOS capacitor
Aliekber Aktag et al.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS (2020)
Deposition of ZnO and Gd2O3 by co-sputtering to enable ZnO-Gd2O3 based PIN junction diodes
C. A. Lopez-Lazcano et al.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2020)
Microstructure and optical properties of Gd2O3 thin films prepared by pulsed laser deposition
Maneesha Mishra et al.
SURFACE & COATINGS TECHNOLOGY (2015)
Rare Earth Elements: Industrial Applications and Economic Dependency of Europe
Georgios Charalampides et al.
INTERNATIONAL CONFERENCE ON APPLIED ECONOMICS (ICOAE) 2015 (2015)
Frequency dependent electrical characteristics of BiFeO3 MOS capacitors
Senol Kaya et al.
JOURNAL OF ALLOYS AND COMPOUNDS (2014)
Hydrophobicity of rare-earth oxide ceramics
Gisele Azimi et al.
NATURE MATERIALS (2013)
Surface morphology and depth profile study of Cd1-xZnxTe alloy nanostructures
Ercan Yilmaz et al.
JOURNAL OF ALLOYS AND COMPOUNDS (2012)
Growth, characterization and optical properties of nanocrystalline gadolinia thin films prepared by sol-gel dip coating
M. C. Ferrara et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2008)
Introducing crystalline rare-earth oxides into Si technologies
H. J. Osten et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2008)
Characterization of rare earth oxides based MOSFET gate stacks prepared by metal-organic chemical vapour deposition
K. Frohlich et al.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2006)
CMOS integration of epitaxial Gd2O3 high-k gate dielectrics
H. D. B. Gottlob et al.
SOLID-STATE ELECTRONICS (2006)
Effect of rare earth oxide additives on the performance of NiMH batteries
T Tanaka et al.
JOURNAL OF ALLOYS AND COMPOUNDS (2006)
A model for multistep trap-assisted tunneling in thin high-k dielectrics -: art. no. 044107
O Blank et al.
JOURNAL OF APPLIED PHYSICS (2005)
Interface and oxide traps in high-κ hafnium oxide films
H Wong et al.
THIN SOLID FILMS (2004)
Rare earth-aluminum oxide glasses for optical applications
R Weber et al.
JOURNAL OF NON-CRYSTALLINE SOLIDS (2004)
Reactive pulsed laser deposition of high-k silicon dioxide and silicon oxynitride thin films for gate-dielectric applications
E Desbiens et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS (2002)
NH3-annealed atomic-layer-deposited silicon nitride as a high-k gate dielectric with high reliability
A Nakajima et al.
APPLIED PHYSICS LETTERS (2002)
Reliability limits for the gate insulator in CMOS technology
JH Stathis
IBM JOURNAL OF RESEARCH AND DEVELOPMENT (2002)
High-κ gate dielectrics:: Current status and materials properties considerations
GD Wilk et al.
JOURNAL OF APPLIED PHYSICS (2001)
Device scaling limits of Si MOSFETs and their application dependencies
DJ Frank et al.
PROCEEDINGS OF THE IEEE (2001)
Fabrication and characterization of metal-oxide-semiconductor field-effect transistors and gated diodes using Ta2O5 gate oxide
JC Yu et al.
IEEE ELECTRON DEVICE LETTERS (2000)
Trap-assisted tunneling in high permittivity gate dielectric stacks
M Houssa et al.
JOURNAL OF APPLIED PHYSICS (2000)
分享论文
