相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Localized states induced by an oxygen vacancy in rutile TiO2
Chungwei Lin et al.
JOURNAL OF APPLIED PHYSICS (2015)
Oxygen deficiency in TiO2: Similarities and differences between the Ti self-interstitial and the O vacancy in bulk rutile and anatase
Peter Deak et al.
PHYSICAL REVIEW B (2015)
Origin of Leakage Paths Driven by Electric Fields in Al-Doped TiO2 Films
Gyeong-Su Park et al.
ADVANCED MATERIALS (2014)
Differences between direct current and alternating current capacitance nonlinearities in high-k dielectrics and their relation to hopping conduction
O. Khaldi et al.
JOURNAL OF APPLIED PHYSICS (2014)
Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode
John Pointet et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2014)
Direct View at Excess Electrons in TiO2 Rutile and Anatase
Martin Setvin et al.
PHYSICAL REVIEW LETTERS (2014)
Band Engineering of Ru/Rutile-TiO2/Ru Capacitors by Doping Cobalt to Suppress Leakage Current
Osamu Tonomura et al.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2012)
Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
Wolfgang Lehnert et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2012)
Atomic layer deposition of high-permittivity TiO2 dielectrics with low leakage current on RuO2 in TiCl4-based processes
Jaan Aarik et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2012)
Improved EOT and leakage current for metal-insulator-metal capacitor stacks with rutile TiO2
Mihaela Popovici et al.
MICROELECTRONIC ENGINEERING (2011)
Electronic and optical properties of aluminium-doped anatase and rutile TiO2 from ab initio calculations
Raphael Shirley et al.
PHYSICAL REVIEW B (2010)
Epitaxial growth of high-kappa TiO2 rutile films on RuO2 electrodes
K. Froehlich et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2009)
Al-doped TiO2 films with ultralow leakage currents for next generation DRAM capacitors
Seong Keun Kim et al.
ADVANCED MATERIALS (2008)
Growth behavior of Al-doped TiO2 thin films by atomic layer deposition
Seong Keun Kim et al.
CHEMISTRY OF MATERIALS (2008)
High dielectric constant gate oxides for metal oxide Si transistors
J Robertson
REPORTS ON PROGRESS IN PHYSICS (2006)
High dielectric constant TiO2 thin films on a Ru electrode grown at 250 °C by atomic-layer deposition
SK Kim et al.
APPLIED PHYSICS LETTERS (2004)
MSINDO quantum chemical modelling study of the structure of aluminium-doped anatase and rutile titanium dioxide
M Steveson et al.
PHYSICAL CHEMISTRY CHEMICAL PHYSICS (2002)