Bandgap and temperature dependence of Auger recombination in InAs/InAsSb type-II superlattices

A time- and temperature-dependent differential-transmission technique is used to study the bandgap dependence of Auger recombination in Ga-free InAs/InAsSb type-II superlattices (T2SLs). The bandgap energies are varied between 290 meV (4.3 mu m) and 135meV (9.2 mu m) by engineering the layer thickness and alloy Sb concentration. A long-wave infrared structure with 135meV bandgap energy is found to have an Auger coefficient of 9 x 10(-26) cm(6)/s at 77 K. The measured Auger coefficients increase with decreasing bandgap from approximately 3 x 10(-27) cm(6)/s for mid-wave infrared bandgaps to 2 x 10(-25) cm(6)/s for long-wave infrared bandgaps at 77 K. The measured T2SL Auger coefficients are compared to predicted Auger coefficients for HgCdTe. Published by AIP Publishing.