期刊
JOURNAL OF APPLIED PHYSICS
卷 119, 期 17, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4947585
关键词
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资金
- Fonds National de la Recherche Luxembourg (FNR)
We investigate the dopant concentration and majority carrier mobility in epitaxial CuInSe2 thin films for different copper-to-indium ratios and selenium excess during growth. We find that all copper-poor samples are n-type, and that hopping conduction in a shallow donor state plays a significant role for carrier transport. Annealing in sodium ambient enhances gallium in-diffusion from the substrate wafer and changes the net doping of the previously n-type samples to p-type. We suggest that sodium incorporation from the glass might be responsible for the observed p-type doping in polycrystalline Cu-poor CuInSe2 solar cell absorbers. Published by AIP Publishing.
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