期刊
JOURNAL OF APPLIED PHYSICS
卷 119, 期 15, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4945772
关键词
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资金
- German Federal Ministry for Economic Affairs and Energy (BMWi) through the project HekMod4 [0325750]
- German Federal Environmental Foundation (DBU)
A power-dependent relative photoluminescence measurement method is developed for doubleheterostructures composed of III-V semiconductors. Analyzing the data yields insight into the radiative efficiency of the absorbing layer as a function of laser intensity. Four GaAs samples of different thicknesses are characterized, and the measured data are corrected for dependencies of carrier concentration and photon recycling. This correction procedure is described and discussed in detail in order to determine the material's Shockley-Read-Hall lifetime as a function of excitation intensity. The procedure assumes 100% internal radiative efficiency under the highest injection conditions, and we show this leads to less than 0.5% uncertainty. The resulting GaAs material demonstrates a 5.760.5 ns nonradiative lifetime across all samples of similar doping (2-3 x 10(17) cm(-3)) for an injected excess carrier concentration below 4 x 10(12) cm(-3). This increases considerably up to longer than 1 mu s under high injection levels due to a trap saturation effect. The method is also shown to give insight into bulk and interface recombination. (C) 2016 Author(s).
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