期刊
JOURNAL OF APPLIED PHYSICS
卷 119, 期 4, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4940702
关键词
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资金
- Japan Society for the Promotion of Science (JSPS) [25246020]
- JSPS
- [26103003]
- Grants-in-Aid for Scientific Research [14J03485, 26103003, 25246020] Funding Source: KAKEN
We demonstrate low-temperature growth of all-epitaxial Co2FeSi/Ge/Co2FeSi trilayer structures by developing Sn-induced surfactant-mediated molecular beam epitaxy (SMBE) of Ge on Co2FeSi. Despite the growth of a semiconductor on a metal, we verify that the inserted Sn monolayers between Ge and Co2FeSi enable to promote the 2D epitaxial growth of Ge up to 5 nm at a T-G of 250 degrees C. An understanding of the mechanism of the Sn-induced SMBE leads to the achievement of all-epitaxial Co2FeSi/Ge/Co2FeSi trilayer structures with spin-valve-like magnetization reversals. This study will open a way for vertical-type and high-performance sGe-based spintronics devices. (C) 2016 AIP Publishing LLC.
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