High-aspect nano-groove fabrication in thick film resists using 150-kV high acceleration voltage electron beam lithography

High acceleration voltage (150 kV) electron beam lithography is applied to two types of thick film resists with different contrasts (gamma). When using 1.6-mu m thick high-gamma resist, the lowest width discrepancy, 35 nm, was observed at 150 kV in the cross-sectional shape, which was almost vertical. At 50 kV, the discrepancy was more than four times greater than the width at 150 kV. The 50-kV cross-sections were drop shaped. The maximum line widths were similar for both resists, while the top line widths were smaller for the high-gamma resist than for the low- gamma resist. In addition, Monte Carlo simulation results were consistent with the experimental values, especially at 150 kV.

Automated summary

This study investigates the application of high acceleration voltage (150 kV) electron beam lithography on two types of thick film resists with different contrasts (gamma). It is found that the cross-sectional shape with the smallest width discrepancy (35 nm) is observed at 150 kV for the 1.6 μm thick high-gamma resist, which is almost vertical. However, at 50 kV, the discrepancy is more than four times greater than that at 150 kV, and the cross-sections are drop shaped. The maximum line widths are similar for both resists, while the top line widths are smaller for the high-gamma resist than for the low-gamma resist. Additionally, the Monte Carlo simulation results agree well with the experimental values, especially at 150 kV.